Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Lowell, MA — Tyco Electronics M/A-COM has announced a line-up of three high-power bipolar transistors designed for pulsed avionics and radar applications, ranging from 960 MHz to 1215 MHz. The ...

The hybrid STE59DE100 ESBT (emitter-switched bipolar transistor) STE50DE100 has a collector-source voltage of 1 kV and collector currents as high as 50A. The product combines bipolar and MOSFET ...