Insulated Gate Bipolar Transistor (IGBT) Market Trends and Investment Opportunities 2026-2030: Revenues to Grow by $7.1 Billion

Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...
Nature

Insulated Gate Bipolar Transistors and Their Applications

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
EDN

High-power bipolar transistors for pulsed avionics applications

Lowell, MA — Tyco Electronics M/A-COM has announced a line-up of three high-power bipolar transistors designed for pulsed avionics and radar applications, ranging from 960 MHz to 1215 MHz. The ...
pv magazine International

Mitsubishi Electric unveils power-switching transistor for solar

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
EDN

Hybrid emitter-switched transistor suits very high power applications

The hybrid STE59DE100 ESBT (emitter-switched bipolar transistor) STE50DE100 has a collector-source voltage of 1 kV and collector currents as high as 50A. The product combines bipolar and MOSFET ...
EurekAlert!

First organic bipolar transistor developed at the TU Dresden

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...