我们相信这种 3D 堆叠的互补金属氧化物半导体 (CMOS) 或 CFET（互补场效应晶体管）将是将摩尔定律延伸到下一个十年的关键。 在过去的 50 年中，影响最深远的技术成就可能是晶体管一如既往地稳步向更小迈进，使它们更紧密地结合在一起，并降低了它们的功耗。

This Design Idea provides a simple, inexpensive, portable circuit as an alternative to a microcontroller to provide a wide-range source of low-distortion sine waves for audio-circuit design and ...

New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...

A new technical paper titled “Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application” was published by researchers at National Tsing Hua University and ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...