Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.

Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Qspeed™ diodes have the lowest QRR of any Silicon diode.