A simple one-step process that produces both n-type and p-type doping of large-area graphene surfaces could facilitate use of the promising material for future electronic devices. The doping technique ...

CNT yarns can be used in thermoelectric devices to produce electricity from low-grade waste heat. To this end, researchers from Okayama University in Japan developed a doping protocol to produce ...

Formed at the boundary between an N-type and P-type semiconductor is a P-N Junction which is created by doping a single crystal of semiconductor. The nature of the P-N junction is one of the crucial ...