Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving ...

“To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require ...

TSMC has officially commenced volume production of its 2nm (N2) semiconductor process in the fourth quarter of 2025, marking ...