To achieve the power, performance, and area (PPA) advantages dictated by Moore’s law, transistors have evolved substantially over the years. The development of planar transistors at Fairchild ...
Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving ...
As the semiconductor industry moves to smaller scales, it must overcome several technical challenges. In 2025, we expect three key developments to make headlines: Gate-All-Around transistor designs, ...
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Intel looks beyond silicon, outlines breakthroughs in atomically-thin 2D transistors, chip packaging, and interconnects at IEDM 2024
Today, the Intel Foundry Technology Research team announced technology breakthroughs in 2D transistor technology using beyond ...
Rapidus on Friday announced that it had begun prototyping of test wafers with 2nm gate-all-around (GAA) transistor structures at its IIM-1 facility in Japan. The company confirmed that early test ...
A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
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