New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

不知道大家有没有感觉到，有干货的论文都比较晦涩难读，如果又是英文的就更难懂了。而且有时读完了还有一些想法需要和作者深入讨论。在这个系列的直播中，波老师会邀请论文作者与读者朋友们直播互动，让作者亲自讲解自己论文的要点，并且还能现场 ...

IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...

TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

Size and power often seem like opposite sides of a coin. When you reduce size – one of the ever-pressing goals in our industry – you inevitably reduce power. But does that have to be the case? By ...

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called ...