In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
Gallium nitride (GaN) RF transistors have traditionally been depletion mode, making them difficult to bias. High frequency enhancement mode transistors, such as the EPC8000 series eGaN FETs from EPC, ...
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