In the world of non-volatile memory, two prominent contenders vie for supremacy: NAND and NOR flash memory. These two memory technologies have been instrumental in shaping the landscape of data ...

Micron Technology recently unveiled 176-layer, triple-level-cell (TLC), 3D NAND flash memory with a 30% smaller die size that employs a new replacement-gate (RG) NAND technology. The chips offer a 35% ...

This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...

Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...

Cyclic Design announces advanced BCH ECC, supporting the next generation flash memory devices that require higher levels of error correction codes (ECC). Companies ...

Rob Crooke, the Vice President and General Manager of the NVM (Non-Volatile Memory) Solutions Group at Intel, announced the impending release of 3D NAND at Intel's Investor Meeting. Incidentally, the ...

This is very simple and useful project which gives an idea about how to build the simple logic gates i.e. AND, OR & NOT gates using one of the universal gates – NAND Gate. This is very simple and ...

Samsung is firing back at Intel with a potent new SSD, but will it stand toe-to-toe with Intel's newer 3D XPoint technology? Share on Facebook (opens in a new window) Share on X (opens in a new window ...