Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...

Micron Technology recently unveiled 176-layer, triple-level-cell (TLC), 3D NAND flash memory with a 30% smaller die size that employs a new replacement-gate (RG) NAND technology. The chips offer a 35% ...

Data-intensive computing applications such as pattern recognition, video processing, database engine and network router have drastically increased due to the rapid development of big data and ...

Samsung is firing back at Intel with a potent new SSD, but will it stand toe-to-toe with Intel's newer 3D XPoint technology? Share on Facebook (opens in a new window) Share on X (opens in a new window ...

Intel-Micron have recently introduced a scalable planar NAND cell for the 20nm technology [1]. Replacement of conventional wrap floating gate (FG) NAND memory cell with a High-K/Metal gate planar cell ...

This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...

Rob Crooke, the Vice President and General Manager of the NVM (Non-Volatile Memory) Solutions Group at Intel, announced the impending release of 3D NAND at Intel's Investor Meeting. Incidentally, the ...

In the world of non-volatile memory, two prominent contenders vie for supremacy: NAND and NOR flash memory. These two memory technologies have been instrumental in shaping the landscape of data ...