The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Data doesn’t have to travel as far or waste as much energy when the memory and logic components are closer together.

Finnish company Semiqon has developed a transistor that operates with virtually zero heat dissipation. They have made silicon-based quantum processors to make future quantum computers more affordable, ...

The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect ...

The circuit was designed to produce an audio power amplifier that operates in the range of Class A type while providing a power output of 40 Watts. Class A – refers to an output stage where the bias ...