Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...

Guerrilla RF’s GRF5509 high-performance power amplifier paired with Impinj’s advanced RAIN RFID reader chips to enable increased read range and improved readability of RAIN RFID tags GREENSBORO, N.C., ...

Guerrilla RF’s GRF5509 high-performance power amplifier paired with Impinj’s advanced RAIN RFID reader chips to enable increased read range and improved readability of RAIN RFID tags Guerrilla RF, Inc ...

GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) today announced that its high-efficiency GRF5509 4-watt power amplifier was selected by Impinj (NASDAQ: PI) for use in their ...

Gallium nitride (GaN) RF transistors have traditionally been depletion mode, making them difficult to bias. High frequency enhancement mode transistors, such as the EPC8000 series eGaN FETs from EPC, ...

NEW DELHI, June 12, 2025 (GLOBE NEWSWIRE) -- Elite RF, a U.S.-based innovator in RF amplifier solutions, announces its entry into the C-band and S-band high-power RF amplifier market. The new systems ...

A wideband RF power amplifier module from Elite RF covers signals from 20 MHz to 6 GHz, delivering a maximum output power of 20 W. Elite RF can also combine these 20-watt amplifiers to create ...

Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...

ICT companies are extensively adopting technologies such as cloud computing and artificial intelligence to ensure seamless operations as teams continue working from home. Focus on fast automation, use ...