The study of Schottky barrier (SB) MOSFETs with metallic source and drain contacts is expanding as a result of recent developments in the semiconductor industry. Instead of the usual impurity-doped ...

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces ...

Portland, Ore. — Ferroelectric transistors—ultra-small gateless two-terminal junctions between semiconductor and oxide—switch by reversing the polarity of their junction. This is the region where ...

KYOTO, Japan, Oct. 23, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional VF/IR trade-off. This way, it delivers high ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

Allegro MicroSystems, LLC announces the release of the next generation series of silicon carbide Schottky barrier diodes. The FMCA series achieves low leakage current and high speed switching at high ...

As a result, it can now deliver high reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras. Modern ADAS cameras and similar systems require ...

VF vs IR Characteristic Comparison Supports higher resolution image sensors. The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm) that offers both space efficiency and ...

Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R ...