LEIDEN, Netherlands, April 04, 2017 (GLOBE NEWSWIRE) -- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors and IC technologies for energy efficient products used in power conversion and ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public ...

New 200-250 V Schottky's outperform traditional Ultrafast rectifiers – eliminating noise at all temps, minimizing EMI filtering requirements, improving circuit efficiency and delivering superior ...

Semtech Corp. has announced the JANS qualification of its Qualified Products List (QPL) 1N5822 Schottky diode to space grade, opening up new satellite and spacecraft applications. JANS is the highest ...

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A 2 /s at 25°C, and 100A, 50A 2 ...

Members can download this article in PDF format. Power systems employ diodes to perform a variety of functions. For example, diodes can protect against damage due to power-source reverse-polarity ...

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...

Toshiba Electronics Devices & Storage Europe has unveiled a new Schottky barrier diode product targeting applications such as rectification and backflow prevention in power supply circuits. The ...