A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...

Infineon Technologies AG has introduced the CoolSiC Schottky diode 2000 V G5, targeting industrial applications with higher power levels and minimized power losses. The CoolSiC Schottky diode is the ...

LEIDEN, Netherlands, April 04, 2017 (GLOBE NEWSWIRE) -- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors and IC technologies for energy efficient products used in power conversion and ...

VF vs IR Characteristic Comparison Supports higher resolution image sensors. The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm) that offers both space efficiency and ...

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces ...

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A 2 /s at 25°C, and 100A, 50A 2 ...

USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

WASHINGTON, July 08, 2022 (GLOBE NEWSWIRE) -- Vantage Market Research’s recent analysis of the Global Power Schottky Diode Market finds that increasing demand for consumer electronics, ...

Sponsored by Texas Instruments: Ideal diodes and ORing controllers offer space-saving, scalable solutions to protect a system against reverse voltage or reverse current. They reduce the energy lost ...