A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...

LEIDEN, Netherlands, April 04, 2017 (GLOBE NEWSWIRE) -- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors and IC technologies for energy efficient products used in power conversion and ...

New 200-250 V Schottky's outperform traditional Ultrafast rectifiers – eliminating noise at all temps, minimizing EMI filtering requirements, improving circuit efficiency and delivering superior ...

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A 2 /s at 25°C, and 100A, 50A 2 ...

VF vs IR Characteristic Comparison Supports higher resolution image sensors. The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm) that offers both space efficiency and ...

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

Diodes are an essential component in many systems, but using them for reverse-connection protection in automotive and other power applications has one weakness: Their forward voltage drop (which can ...