The SCS220AE is another SiC Schottky Barrier Diode proudly developed by ROHM Semiconductor constructed from a silicon carbide epitaxial plane. This diode has a reverse voltage of 650 V and forward ...
Diodes Incorporated has introduced a family of high-speed switching diodes in a choice of small footprint, low-profile packages, enabling significant reductions in component count and PCB area.
Specifying a breakdown voltage of 400V, the MMBD5004BRM quad switching diode array withstands worst-case transients in DAA modem tip-and-ring telephone line interfacing and general off-line ...
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