Despite being the first to adopt the gate-all-around (GAA) technology, Samsung has struggled with commercialization and yield issues and its foundry market share has dropped below 10%. Han Jin-Man, ...

FinFET technology enabled lower leakage, reduced short-channel effects, and better performance at reduced voltages. It successfully extended CMOS scaling from the 22nm node through the 7nm generation ...

Intel's new CEO Lip Bu-Tan took to the stage at the company's Intel Foundry Direct 2025 event here in San Jose, California, to outline the company's progress on its foundry initiative. Tan announced ...

Lip-Bu Tan, the chief executive of Intel, is considering stopping the promotion of the company's 18A fabrication technology (1.8nm-class) to foundry customers, instead shifting the company's efforts ...

TSMC has announced a breakthrough chip fabrication technology, with reduced node size, increased performance and better power management — all of which should ultimately lead to faster iPhones and ...

A new process design kit (PDK) from imec aims to provide broad access to a 2-nm gate-all-around (GAA) process node and associated backside connectivity for design pathfinding, system research, and ...

Intel's 18A process is built around the Backside Power Delivery Network, or BSPDN, a structural overhaul known inside Intel as PowerVia. Instead of routing power through ...

The transition to the 2nm technology node introduces unprecedented challenges in Automated Test Equipment (ATE) bring-up and manufacturability. As semiconductor devices scale down, the complexity of ...

While all eyes tend to focus on the leading-edge silicon nodes, many mature nodes continue to enjoy robust manufacturing demand. Successive nodes stopped reducing die cost at around the 20nm node. “In ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Credo Technology Group Holding Ltd (NASDAQ: CRDO) today introduced its newest 112G PAM4 SerDes Intellectual Property (IP) family on TSMC’s industry leading N3 and N7 ...