Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...

This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...

A new publication from Opto-Electronic Science; DOI 10.29026/oes.2024.230046 discusses photo-driven Fin Field-Effect Transistors. Infrared detectors are the core components of infrared detection ...

Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...

A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” was published by researchers at Korea University and Sungkyunkwan University.

A new technical paper titled “Demonstration of Vertically Stacked ZnO/Te Complementary Field-Effect Transistor” was published by researchers at POSTECH and Mokpo National University.