IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...
Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...
Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a 650V discrete insulated gate bipolar transistor (IGBT) “GT30J65MRB” for the power factor ...
The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...
The expanded lineup are designed to run without interruption at junction temperatures as high as 175°C. Credit: Ju Jae-young/Shutterstock.com. US-based semiconductor manufacturer Diodes has added new ...
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