The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride. To ...

Leveraging lightning-fast technology already familiar to many from the micro storage world of digital cameras, thumb drives and laptop computers, the San Diego Supercomputer Center (SDSC) at the ...

(a) The percolation model for gate leakage of metal nanocrystals floating gate memory. (b) Schematic structure diagram of the floating gate memory based on discrete Pt nanocrystals/h-BN/MoS 2 van der ...

In 1987 Fujio Masuoka, then working at Toshiba, introduced NAND flash at the 1987 IEEE International Electron Devices Meeting (IEDM) in San Francisco. Toshiba said that the name “flash” was suggested ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

A technical paper titled “Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications” was published by researchers at Seoul National University of ...

The Flash Memory Summit 2022 conference, held this week, is a showcase for the latest in flash storage technology. The conference, also known by its “FMS” acronym, brought together developers of a ...

It used to be that every few years, the business media would report on the latest “slump” in sales of flash memory semiconductors. This was a decades-long trend — demand would “hot up,” as the Brits ...