A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

Key TakeawaysBerkeley Lab scientists showed a novel way to build advanced transistors decades before similar structures ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

Using a new fabrication technique, engineers have developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new ...

Ars Technica has been separating the signal from the noise for over 25 years. With our unique combination of technical savvy and wide-ranging interest in the technological arts and sciences, Ars is ...

While theoretically the ideal semiconductor, diamond has not yet become mainstream in transistors and other components. Researchers have fabricated a diamond field-effect transistor (JFET) with a ...

MIT researchers developed a more powerful magnetic transistor that could be used to design simpler circuits and create faster and more energy-efficient electronics.

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