NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, ...

Keysight Technologies has added its double-pulse test portfolio enabling customers to benefit from accurate and easy measurement of the dynamic characteristics of wide-bandgap (WBG) power ...

Magnachip Semiconductor has announced the launch of two new 6th-generation (Gen6) 650V IGBTs, specifically designed for solar ...

A new report published today by the Compound Semiconductor Applications (CSA) Catapult has highlighted how the UK can be a ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, will unveil its latest WiseGan ...

Magnachip Semiconductor has announced a significant expansion of its product lineup with the launch of 25 new 6th-generation ...

Cambridge GaN Devices (CGD) has revealed more details about a solution that will enable the company to address EV powertrain ...

Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied ...

Infineon Technologies has launched its next generation of high-density power modules for enabling AI and high-performance ...