Abstract: In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobilitytransistors (HEMTs) under continuous DC gate bias ($\mathrm{V}_{\mathrm{GS}}$) and ...
Abstract: This paper presents a dual-mode direct-drive driver for depletion-mode GaN (D-GaN) power transistors, integrating negative voltage generation and gate energy recycling with reused inductors ...
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