Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...
Abstract: The necessity for quantum error correction arises from the need to safeguard quantum information from errors induced by decoherence and other noise forms ...
一些您可能无法访问的结果已被隐去。
显示无法访问的结果