Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...

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Increased storage needs at the edge and in the cloud are fueling rising demand for higher-capacity flash memory across multiple applications. Released every 12 to 18 months, 3D NAND scaling outpaces ...

Abstract: Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology ...