Abstract: In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobilitytransistors (HEMTs) under continuous DC gate bias ($\mathrm{V}_{\mathrm{GS}}$) and ...

Our experts will be on hand to demonstrate and guide attendees through the various sessions so that, by the end of each workshop, delegates will be armed with the knowledge to identify ways in which ...