Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...

Abstract: The parasitic inductance and dynamic current sharing performances of multichip silicon carbide power module packaging limit the device's performance. Moreover, high electrical properties ...

In large utility PV plants, a single failure in a central inverter can bring an entire megawatt-level power generation unit ...