Explore the new IGBT module that features advanced Trench Gate Field Stop technology for efficient power management.

CISSOID has expanded its standard product offerings with the release of the CMT-PLA1BL12300MA. This new 1200V/300A ...

CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge ...

Key market opportunities exist in the rapid growth and deployment of advanced SiC and GaN power devices within new energy vehicles, driven by increasing sales of 800V+ architecture vehicles. The ...

The market is poised for growth driven by increased EV demand, AI-enhanced motor control, renewable energy expansion, and SiC ...

Industry Research Report, 2025" has been added to ResearchAndMarkets.com's offering. SiC/GaN research indicates a significant uptick in the demand for 800V+ ...

Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...

Abstract: Fatigue-induced delamination of the direct-bonded copper (DBC) solder layer is a critical and latent failure mode in multichip Insulated Gate Bipolar Transistor (IGBT) power modules. To ...

Abstract: The reliability of power module packaging insulation is critical for the stable and safe operation of high-voltage power devices. Within the module packaging, the interface between the ...

The digital low-dropout (LDO) linear regulator is one of the latest innovations in the power industry, bringing telemetry and adjustability to a linear power supply in a very ... Power Shift: ...