IEEE

Gate First Metal-Aluminum-Nitride PMOS Electrodes for 32nm Low Standby Power Applications

Abstract: The effective work function (EWF) of ternary metal-aluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition ...
IEEE

Gate-first TiAlN P-gate electrode for cost effective high-k metal gate implementation

Abstract: Gate-first (GF) high-k metal gate (HKMG) for LSTP/LOP logic and DRAM periphery applications requires an efficient and low-cost effective work function (eWF ...