在电路中，NMOS经常用作下管，S极接地，用G极来控制管子的导通截止，很方便。 NMOS用作上管时，因为S极电平不确定，即G极电平也不好确定，很不方便。 PMOS经常用作上管，S极接固定的VCC，用G极来控制管子的导通截止。 用作下管时，因为S极电源不确定，无法 ...

在电路中，NMOS经常用作下管，S极接地，用G极来控制管子的导通截止，很方便。 NMOS用作上管时，因为S极电平不确定，即G极电平也不好确定，很不方便。 PMOS经常用作上管，S极接固定的VCC，用G极来控制管子的导通截止。 用作下管时，因为S极电源不确定，无法 ...

提出一种用于宽频带可编程有源滤波器的带宽增强技术，通过差分nMOS/pMOS跨导器结构、共模反馈（CMFB）环路和共享LC网络实现 ...

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...

高速低 kickback 噪声动态比较器采用改进三阶段架构，通过NMOS/PMOS并行预放大器和强臂锁存器设计，实现-0Vdd至Vdd全共模电压 ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...