A new Metal Control Gate Last process (MCGL process) has been successfully developed for the DC-SF (Dual Control gate with Surrounding Floating gate cell)[1] three-dimensional (3D) NAND flash memory.

The NAND gate is designed using DVS and MTCMOS technique gives least power consumption. All the simulations have been performed on Tanner EDA Tool version 14.1.

As electronic devices become more advanced, integrating complex logic into a single component becomes essential. Enter AND6, ...

AND gate implemented as diode-resistor logic. (Credit: Anthony Francis-Jones) The fun part about logic gates is that there are so many ways to make them, with each approach having its own ...

瑞萨对Transphorm的收购也基本符合大众预期。行业观点普遍认为GaN市场正走向集中化；并且从瑞萨、英飞凌等市场参与者越来越频繁的动作来看，GaN市场的竞争也越来越考验垂直整合能力——并购行为也就成为了必然。

I brought a signal to raise and lower the pen out from one of the Pi’s GPIO pins, passing it through a 74LS08 AND gate IC used as a cheap and cheerful 3.3- to 5-V digital level shifter.