Abstract: The reverse-conducting injection-enhanced gate transistor (RC-IEGT) is a device that has both p-type and n-type layers at the backside. It was found that the RC-IEGT has a weaker ...

Abstract: This article investigates the performance enhancement of flow-induced vibration piezoelectric energy harvesters through the coupling of vortex-induced vibration (VIV) and galloping. Strips ...