Abstract: The reverse-conducting injection-enhanced gate transistor (RC-IEGT) is a device that has both p-type and n-type layers at the backside. It was found that the RC-IEGT has a weaker ...

This is a sparse iterative linear solver I developed while doing my Phd at the HydroGeophysics Group, Aarhus University, Denmark. The code is developed in Fortran/OpenMP, and is designed with focus on ...

Abstract: With lower on-resistance and higher switching speed, SiC (silicon carbide) MOSFETs are widely used in high frequency power conversion circuits. The oscillation and voltage overshoot due to ...