IEEE

High V TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

Abstract: In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN /AlGaN/GaN HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low-temperature ...
IEEE

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable ...

Abstract: In this article, we demonstrate a novel E-mode HEMT featuring in situ AlN dielectric layer on p-GaN cap layer. Compared with conventional p-GaN gate HEMT, the threshold voltage of in situ ...
USA Today

Golden Gate Bridge has safety nets to prevent jumping deaths after 87 years

If you or someone you know needs mental health resources and support, please call, text, or chat with the 988 Suicide & Crisis Lifeline or visit988lifeline.org for 24 ...