A lateral Ge/Si PIN avalanche photodiode is fabricated using the standard CMOS process. The primary responsivity is 0.95A/W with -3dB bandwidth over 67GHz at bias voltage of -4V. The gain bandwidth ...

Here, authors employ WSe 2 thin layers to construct photodiode, reporting responsivity of 0.388 A/W and response time down to sub-10 picoseconds.

Zinc (Zn) diffusion is a critical process for the fabrication of InGaAs/InP planar avalanche photodiodes (APDs). In this paper, we built up a Zn diffusion model to calculate Zn diffusion profile for ...

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