Abstract: This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n±GaN source layer was performed ...

Abstract: Vertical metal-oxide-semiconductor field-effect transistors (UMOSFETs) were built on silicon substrates thinned to 7 mum and plated with 50- mum copper as drain electrode and mechanical ...

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