Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on PEN eBook October 2025, Next-Gen AI Data Centers, and 22kW Servo Drive! Here’s a RoundUp of this week’s ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

The state of the current power electronics is increasingly focused on reliable power converters that can reduce the costs of the entire system. Over time, the engineering approach has been directed ...

SiC MOSFETs are revolutionizing motor control by minimizing energy losses, enhancing system reliability, and boosting thermal robustness. Electric motors are becoming increasingly common as more ...

With the increasing adoption of EVs and a growing focus on environmental sustainability, electric motors are expected to be used more extensively. Electric motors are the beating heart of sustainable ...

MIT Spin-Off Vertical Semiconductor Accelerates Vertical GaN Development for Efficient AI Data Center. Vertical Semiconductor, a recent spin-off from MIT, has secured $11 million in seed funding led ...

GaN transistors are significantly faster and smaller than silicon MOSFETs. GaN switching devices are available in two different types. Silicon power MOSFETs have not kept pace with the evolutionary ...

This series of tutorials explains in-depth power supply design steps for the buck and the boost topology DC-DC switching regulators, supplemented by dedicated sessions on PCB layout and signal edge ...

Once limited to niche applications such as fast chargers, GaN now powers data centers, solar inverters, and e-mobility systems. Gallium nitride has moved from niche to mainstream in just a few years.

The DC-DC converter is a more or less complex device whose task is to carry out a DC voltage transformation from one level to another Often, the need to convert one DC voltage into another in the ...

Wide bandgap materials such as gallium nitride (GaN) are emerging as the technology to take electronic performance to the next level. GaN-based electronic components offer a number of important ...

The objective is to have the process flow installed for 300 mm from the epitaxy to the fully processed wafer. Gallium nitride is still maturing for its applicability in evolving high-power ...