Facepalm: Samsung is reportedly raising DRAM and NAND prices by up to 30 percent, following similar hikes from SanDisk and Micron. SanDisk raised NAND flash prices by more than 10 percent a few weeks ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

Most smartphones and computers today boast extremely fast read and write speeds, thanks to a paradigm shift towards flash memory, especially in consumer PCs. NAND flash memory finds use in a variety ...

What just happened? Intel and SK hynix have finalized an $8.85 billion deal that transfers Intel's NAND flash memory business to the South Korean semiconductor giant, marking the completion of a multi ...

Chosun Biz and ICSmart report that Samsung Electronics plans to reduce NAND wafer production at its Xi'an factory in China by over 10%. Amid a global NAND oversupply, this decision likely aims to ...

TL;DR: Samsung Electronics has developed a 400-layer NAND technology, surpassing SK hynix's 321-layer NAND. This positions Samsung as a leader in NAND flash technology. The 400-layer NAND will enter ...

Micron Technology has announced that it is shipping ninth-generation (G9) TLC NAND in SSDs, making it the first in the industry to achieve this milestone. Micron G9 NAND features what the company ...

Abstract: CMOS NAND gate circuit performance degradation caused by a single pMOSFET wearout induced by constant voltage stress in 2.0 nm gate dielectrics is examined using a switch matrix technique.

Memory vendors are racing to add more layers to 3D NAND, a competitive market driven by the explosion in data and the need for higher-capacity solid state drives and faster access time. Micron already ...