Abstract: A memristive characteristic of an In-Ga-Zn-O (IGZO) thin-film memristor (TFM) has been improved by conductive buffer layers. The IGZO TFM is actually fabricated by inserting the conductive ...

Abstract: To enable a software-defined spectrally agile phased array operation across multiple bands from 30-100 GHz, we present a 30-88 GHz broadband IQ vector modulator phase shifter in 90 nm SiGe.