Abstract: In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobilitytransistors (HEMTs) under continuous DC gate bias ($\mathrm{V}_{\mathrm{GS}}$) and ...

Our experts will be on hand to demonstrate and guide attendees through the various sessions so that, by the end of each workshop, delegates will be armed with the knowledge to identify ways in which ...

I Laboratório de Micologia Clínica, Departamento de Análises Clínicas, Faculdade de Ciências Farmacêuticas, Universidade Estadual Paulista, Araraquara, São Paulo, Brasil II Núcleo de Bioensaios, ...

Abstract: In FOWLP/FOPLP warpage and die shift can still cause issues affecting handling as well as the accuracy of downstream processes. State-of-the-art liquid mold compounds are highly filled to ...