MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) on Monday unveiled five new 1200-volt silicon carbide power modules ...

Explore the new IGBT module that features advanced Trench Gate Field Stop technology for efficient power management.

The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, ...

Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.

Offered in single switch and low side chopper configurations, each power module features a SiC MOSFET integrated with a soft body diode offering low reverse recovery. The result is reduced switching ...

CISSOID has expanded its standard product offerings with the release of the CMT-PLA1BL12300MA. This new 1200V/300A ...

Devices Offer Drop-in Replacements for Competing Solutions in Medium to High Frequency ApplicationsMALVERN, Pa., Jan. 28, ...

CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge ...

MALVERN, PA — Vishay Intertechnology (NYSE: VSH) recently introduced four new 100-volt Gen 2 Trench MOS Barrier Schottky ...

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Aeva® (Nasdaq: AEVA), a leader in next-generation sensing and perception systems, today announced the development of a new high-power semiconductor optical amplifier (SOA) delivering industry-leading ...

Five 1200-V SiC power modules in SOT-227 packages from Vishay serve as drop-in replacements for competing solutions.