Abstract: This work investigated the impact of in-situ N2 or H2/N2 plasma pretreatment on the interface and border trap states between plasma-enhanced atomic layer deposition (PEALD) AlN and GaN in ...
Abstract: In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and ...
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