The NAND gate is designed using DVS and MTCMOS technique gives least power consumption. All the simulations have been performed on Tanner EDA Tool version 14.1. The proposed technique reduces the ...

With the advent of battery operated devices and scaling trends in deep submicron (DSM) regime, leakage power is becoming large component of total power dissipation. In this paper leakage reduction ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...