合肥晶合集成电路股份有限公司(简称晶合集成)近日申请了一项名为“一种半导体器件中西格玛沟槽的制作方法”的专利,引发了行业关注。这项专利技术聚焦于半导体器件制造中的关键环节,旨在优化PMOS和NMOS的制程,解决两者高度差带来的潜在问题。这项技术革新,预示着国产芯片制造工艺的又一次进步。 解决PMOS/NMOS高度差的意义 PMOS和NMOS的高度差是影响芯片性能的重要因素之一。由于制造工艺的复杂性 ...
在电路中,NMOS经常用作下管,S极接地,用G极来控制管子的导通截止,很方便。 NMOS用作上管时,因为S极电平不确定,即G极电平也不好确定,很不方便。 PMOS经常用作上管,S极接固定的VCC,用G极来控制管子的导通截止。 用作下管时,因为S极电源不确定,无法 ...
PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...
X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...