In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

Following production cuts by NAND flash manufacturers and the resolution of inventory destocking issues in China's sector, industry supply chain sources indicate that NAND spot pricing ...

The late 1990s saw the widespread introduction of solid-state storage based around NAND Flash. Ranging from memory cards for portable devices to storage for desktops and laptops, the data storage ...

Abstract: We demonstrate a gate all around (GAA) negative capacitance FET(NCFET). The device provides an equivalent oxide thickness (EOT) of 6.5A˚ with unscavenged SiO2 interlayer (IL), and a high ...

NANDFCTRL2 is a VHDL IP core implementing an interface to NAND flash memory devices. The core supports ONFI 4.0 and provides DMA transfers to and from the memory. The core implements a BCH EDAC ...

One important consideration in multi-stage cell design is how to determine the appropriate transistor sizes for the input stage while the output stage drive is increased. For example, consider an 8x ...

Ever wondered how SSDs read and write data, or what determines their performance? Our tech explainer has you covered.

Researchers find a faster way to etch deep holes for 3D NAND Plasma-based cryo-etching technique doubles etch speed, improving efficiency Faster etching might mean cheaper storage, but real-world ...

The number of bits per cell is literally how many different values can be stored in a single NAND flash floating-gate transistor. These transistors are packed onto a layer with ever-increasing ...

Semiconductor equipment companies ASML Holding, Applied Materials, KLA Corp, and Lam Research Corp have benefited from the AI ...