A configurable uni-traveling-carrier photodiode with hybrid-graded-doping mechanism is proposed both for vertical to waveguide designs. This yields> 150 GHz bandwidth, 12.41 dBm output power at 100 ...

A lateral Ge/Si PIN avalanche photodiode is fabricated using the standard CMOS process. The primary responsivity is 0.95A/W with -3dB bandwidth over 67GHz at bias voltage of -4V. The gain bandwidth ...

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