A lateral Ge/Si PIN avalanche photodiode is fabricated using the standard CMOS process. The primary responsivity is 0.95A/W with -3dB bandwidth over 67GHz at bias voltage of -4V. The gain bandwidth ...

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Phlux Technology announces a 30 µm optical window version of the Aura family of 1550 nm Noiseless InGaAs APDs. The sensors, ...

Critically, the device exhibits outstanding photodetection metrics under low-intensity UV illumination, achieving a high responsivity of 10.2 A/W, a detectivity of 6.86 × 10 13 Jones, and an ...

Enhanced Responsivity: These Pt-embedded DNWs deliver remarkable performance, achieving a responsivity of 68.5 A W -1 at room temperature under 220 nm UV light—around 2000 times higher than ...

Two-dimensional (2D) materials hold great promise for high-performance photonic chip-integrated photodetectors, thanks to their outstanding electronic and optical properties as well as ...

An amorphous silicon avalanche photodiode with a very low breakdown voltage is presented for back-end-of-line integration. The device is fabricated using plasma enhanced chemical vapor deposition at a ...