In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...

With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...

A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to ...